參數(shù)資料
型號： IKW03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術(shù)與軟，恢復快反平行何快恢復二極管
文件頁數(shù)： 8/15頁
文件大?。?/td> 431K
代理商： IKW03N120H2
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Power Semiconductors
8
Rev. 2, Mar-04
E
,
S
0A
2A
4A
0.0mJ
0.5mJ
1.0mJ
E
on
1
E
off
E
ts
1
E
,
S
0
50
100
150
200
250
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJ
E
on
1
E
ts
1
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
,
dynamic test circuit in Fig.E )
R
G
,
GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
dynamic test circuit in Fig.E )
E
,
S
25°C
80°C
125°C
150°C
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
E
ts
1
E
on
1
E
off
E
o
,
T
U
O
S
E
L
0V/us
1000V/us
2000V/us
3000V/us
0.00mJ
0.04mJ
0.08mJ
0.12mJ
0.16mJ
I
C
=1A,
T
J
=150°C
I
C
=1A,
T
J
=25°C
I
C
=3A,
T
J
=150°C
I
C
=3A,
T
J
=25°C
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
R
G
= 82
,
dynamic test circuit in Fig.E )
dv/dt
, VOLTAGE
SLOPE
Figure 16. Typical turn off switching energy
loss for soft switching
(
dynamic test circuit in Fig. E
)
1
)
E
on
and
E
ts
include losses
due to diode recovery.
1
)
E
and
E
include losses
due to diode recovery.
1
)
E
on
and
E
ts
include losses
due to diode recovery.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW03N120H2FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO247-3
IKW03N120H2XK 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247
IKW08T120 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW08T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW08T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3
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