參數(shù)資料
型號(hào): IKW25T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: TRENCHSTOP SERIES
中文描述: TRENCHSTOP系列
文件頁(yè)數(shù): 2/15頁(yè)
文件大小: 450K
代理商: IKW25T120
IKW25T120
^
TrenchStop Series
Power Semiconductors
2
Preliminary / Rev. 1 Jul-02
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
0.65
R
thJCD
1.0
R
thJA
TO-247AC
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=25A
T
j
=25
°
C
T
j
=125
°
C
T
j
=150
°
C
V
GE
=0V,
I
F
=25A
T
j
=25
°
C
T
j
=125
°
C
T
j
=150
°
C
I
C
=1mA,
V
CE
=
V
GE
V
CE
=1200V
,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
1200
-
-
Collector-emitter saturation voltage
-
-
-
1.7
2.0
2.2
2.2
-
-
Diode forward voltage
V
F
-
-
-
1.7
1.7
1.7
2.2
-
-
Gate-emitter threshold voltage
V
GE(th)
5.0
5.8
6.5
V
Zero gate voltage collector current
I
CES
-
-
-
-
-
-
-
0.25
2.5
600
-
mA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=25A
nA
S
16
8
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