參數(shù)資料
型號： IKW25T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： TRENCHSTOP SERIES
中文描述： TRENCHSTOP系列
文件頁數(shù)： 8/15頁
文件大小： 450K
代理商： IKW25T120
IKW25T120
^
TrenchStop Series
Power Semiconductors
8
Preliminary / Rev. 1 Jul-02
E
,
S
10A
20A
30A
40A
0,0mJ
2,0mJ
4,0mJ
6,0mJ
8,0mJ
10,0mJ
12,0mJ
14,0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
E
,
S
5
15
R
G
,
GATE RESISTOR
25
35
0 mJ
2 mJ
4 mJ
6 mJ
8 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=22
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=25A,
Dynamic test circuit in Figure E)
E
,
S
50°C
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=25A,
R
G
=22
,
Dynamic test circuit in Figure E)
100°C
150°C
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
7mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
400V
500V
600V
700V
800V
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
7mJ
8mJ
9mJ
10mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
=150°C,
V
GE
=0/15V,
I
C
=25A,
R
G
=22
,
Dynamic test circuit in Figure E)
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