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| 型號： | IOS62C256-70U |
| 英文描述： | IC-SM-256K CMOS SRAM |
| 中文描述： | 集成電路的Sm - 256K CMOS SRAM的 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 65K |
| 代理商： | IOS62C256-70U |
ISSI
IS62C256
Integrated Silicon Solution, Inc.
Rev. D 0895
SR81995C256
2-3
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
5V
±
10%
5V
±
10%
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 5.0V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-45 ns
Min. Max.
—
—
—
—
—
—
-70 ns
Min. Max.
—
—
—
—
—
—
-100 ns
Min. Max.
—
—
—
—
—
—
Symbol
I
CC
1
Parameter
Vcc Operating
Supply Current
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Unit
mA
Com.
Ind.
Com.
Ind.
Com.
Ind.
60
70
70
80
5
10
60
70
65
75
5
10
60
70
65
75
5
10
I
CC
2
mA
I
SB
1
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
—
—
0.5
1.0
—
—
0.5
1.0
—
—
0.5
1.0
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
Symbol
V
OH
Parameter
Output HIGH Voltage
Test Conditions
V
CC
= Min., I
OH
= –1.0 mA
Min.
2.4
Max.
—
Unit
V
V
OL
V
IH
V
IL
I
LI
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
V
CC
= Min., I
OL
= 2.1 mA
—
2.2
–0.3
–2
–10
–2
–10
0.4
V
V
V
μ
A
V
CC
+ 0.5
0.8
2
10
2
10
GND
≤
V
IN
≤
V
CC
Com.
Ind.
Com.
Ind.
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
,
Outputs Disabled
μ
A
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
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