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參數(shù)資料
| 型號(hào)： | IPD60R385CP |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 360K |
| 代理商： | IPD60R385CP |
IPD60R385CP
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous diode forward current
I
S
A
Diode pulse current
2)
I
S,pulse
27
Reverse diode d
v
/d
t
4)
d
v
/d
t
15
V/ns
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.5
K/W
R
thJA
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm
2
cooling
area
5)
-
35
-
Soldering temperature,
reflowsoldering
T
sold
reflow MSL3
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=250 μA
600
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=0.34 mA
2.5
3
3.5
Zero gate voltage drain current
I
DSS
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
-
-
1
μA
V
DS
=600 V,
V
GS
=0 V,
T
j
=150 °C
-
10
-
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=5.2 A,
T
j
=25 °C
-
0.35
0.385
V
GS
=10 V,
I
D
=5.2 A,
T
j
=150 °C
-
0.94
-
Gate resistance
R
G
f
=1 MHz, open drain
-
1.8
-
Values
Thermal resistance, junction -
ambient
Value
T
C
=25 °C
5.2
Rev. 2.0
page 2
2006-04-04
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPD60R385CP NON DRY | 制造商:Infineon Technologies AG 功能描述: |
| IPD60R385CP_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:CoolMOS Power Transistor |
| IPD60R385CPATMA1 | 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel |
| IPD60R385CPBTMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 9A TO-252 |
| IPD60R385CPT | 制造商:Infineon Technologies AG 功能描述: |
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