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參數(shù)資料
| 型號： | IR2153DS |
| 英文描述： | Half Bridge Driver. LO In Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtime in a 8-lead SOIC package with bootstrap diode |
| 中文描述： | 半橋驅(qū)動器。勞在用RT階段。可編程振蕩頻率。死區(qū)時間1.2us的8引腳的SOIC封裝，自舉二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 94K |
| 代理商： | IR2153DS |
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency
f
=
+
1
1.4 (R
75 ) C
T
T
Matched propagation delay for both channels
Low side output in phase with R
T
Description
The IR2151 is a high voltage, high speed, self-os-
cillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The front
end features a programmable oscillator which is simi-
lar to the 555 timer. The output drivers feature a high
pulse current buffer stage and an internal deadtime
designed for minimum driver cross-conduction. Propa-
gation delays for the two channels are matched to sim-
plify use in 50% duty cycle applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.
Typical Connection
Preliminary Data Sheet No. PD60034-
J
IR2151
(NOTE: For new designs, we
recommend IR’s new products IR2153 and IR21531)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle
50%
I
O
+/-
100 mA / 210 mA
V
OUT
10 - 20V
Deadtime (typ.)
1.2 μs
Packages
1
8 Lead PDIP
8 Lead SOIC
up to 600V
V
CC
R
T
C
T
V
B
HO
V
S
LO
COM
TO
LOAD
(Refer to Lead Assignment diagram for correct pin configuration)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IR2153PBF | 功能描述:功率驅(qū)動器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2153S | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| IR2153SPBF | 功能描述:功率驅(qū)動器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2153STR | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| IR2153STRPBF | 功能描述:功率驅(qū)動器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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