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| 型號(hào)： | IR22381QPBF |
| 廠商： | International Rectifier |
| 英文描述： | 3-PHASE AC MOTOR CONTROLLER IC |
| 中文描述： | 3相AC電機(jī)控制IC |
| 文件頁(yè)數(shù)： | 23/30頁(yè) |
| 文件大?。?/td> | 1133K |
| 代理商： | IR22381QPBF |
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IR22381Q
PBF
/IR21381Q
(
P
b
F
)
23
2
Sizing tips
2.1
Bootstrap supply
The V
BS1,2,3
voltage provides the supply to the high
side drivers circuitry of the IR22381/IR21381. V
BS
supply sit on top of the V
S
voltage and so it must be
floating.
The bootstrap method to generate V
BS
supply can
be used with IR22381/IR21381 high side drivers.
The bootstrap supply is formed by a diode and a
capacitor connected as in Figure 23.
I
o
I
Figure 23:
bootstrap supply schematic
This method has the advantage of being simple and
low cost but may force some limitations on duty-
cycle and on-time since they are limited by the
requirement to refresh the charge in the bootstrap
capacitor.
Proper capacitor choice can reduce drastically
these limitations.
Bootstrap capacitor sizing
To size the bootstrap capacitor, the first step is to
establish the minimum voltage drop (
V
BS
) that we
have to guarantee when the high side IGBT is on.
If
V
GEmin
is the minimum gate emitter voltage we
want to maintain, the voltage drop must be:
V
V
V
≤
under the condition:
>
GE
V
min
where
V
CC
is the IC voltage supply,
V
F
is bootstrap
diode forward voltage,
V
CEon
is emitter-collector
voltage of low side IGBT and
V
BSUV-
is the high-side
supply undervoltage negative going threshold.
CEon
V
GE
F
CC
BS
V
min
BSUV
V
Now we must consider the influencing factors
contributing V
BS
to decrease:
IGBT turn on required Gate charge (
Q
G
);
IGBT gate-source leakage current (
I
LK_GE
);
Floating section quiescent current (
I
QBS
);
Floating section leakage current (
I
LK
)
Bootstrap diode leakage current (
I
LK_DIODE
);
Desat diode bias when on (
I
DS-
)
Charge required by the internal level shifters
(
Q
LS
); typical 20nC
Bootstrap capacitor leakage current (
I
LK_CAP
);
High side on time (
T
HON
).
I
LK_CAP
is only relevant when using an electrolytic
capacitor and can be ignored if other types of
capacitors are used. It is strongly recommend using
at least one low ESR ceramic capacitor (paralleling
electrolytic and low ESR ceramic may result in an
efficient solution).
Then we have:
+
+
=
GE
LK
LS
G
TOT
I
Q
Q
Q
_
(
I
I
+
+
_
+
+
QBS
I
HON
T
DS
CAP
LK
DIODE
LK
LK
I
I
+
+
)
_
The minimum size of bootstrap capacitor is:
BS
TOT
V
BOOT
Q
C
=
min
An example follows:
using a 15A @ 100°C IGBT (GB15XP120K):
I
QBS
= 250 μA
I
LK
= 50 μA
Q
LS
= 20 nC;
Q
G
= 58 nC
(Q
ge
+Q
gc
Datasheet GB15XP120K);
I
LK_GE
= 250 nA
(Datasheet GB15XP120K);
I
LK_DIODE
= 100 μA (with reverse recovery time <100 ns);
I
LK_CAP
= 0
(neglected for ceramic capacitor);
I
DS-
= 150
μA
(see Static Electrical Charact.);
T
HON
= 100 μs.
And:
V
CC
= 18 V
V
F
= 1 V
V
CEonmax
= 2.5 V
V
GEmin
= 11.9 V
the maximum voltage drop
V
BS
becomes
≤
GE
F
CC
BS
V
V
V
V
min
(See Static Electrical Charact.);
(See Static Electrical Charact.);
=
CEon
V
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