參數(shù)資料
型號(hào)： IRF1404L
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 40V的，的Rds（on）\u003d 0.004ohm，身份證\u003d 162A章）
文件頁數(shù)： 2/10頁
文件大?。?/td> 306K
代理商： IRF1404L
IRF1404S/L
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 0.12mH
R
G
= 25
, I
AS
= 95A. (See Figure 12)
I
SD
≤
95A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 95A, V
GS
= 0V
T
J
= 25°C, I
F
= 95A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
71
180
1.3
110
270
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
162
650
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
Use IRF1404 data and test conditions.
Parameter
Min. Typ. Max. Units
40
–––
–––
0.036 –––
––– 0.00350.004
2.0
–––
106
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
–––
35
–––
42
–––
17
–––
140
–––
72
–––
26
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 95A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 60A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 95A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 95A
R
G
= 2.5
R
D
= 0.21
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
20
250
200
-200
200
–––
60
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
7360
1680
240
6630
1490
1540
–––
–––
–––
–––
–––
–––
pF
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
–––
–––
*
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
相關(guān)PDF資料
PDF描述
IRF1404S Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
IRF1404 Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
IRF1405L Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
IRF1405S Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
IRF1405PBF AUTOMOTIVE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1404LPBF 功能描述:MOSFET MOSFT 40V 162A 4mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1404PBF 功能描述:MOSFET MOSFT 40V 162A 4mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1404S 功能描述:MOSFET N-CH 40V 162A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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