參數(shù)資料
型號： IRF1407L
廠商： International Rectifier
英文描述： Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 75V的，的Rds（on）\u003d0.0078з，身份證\u003d 100號A）
文件頁數(shù)： 1/11頁
文件大?。?/td> 159K
代理商： IRF1407L
Parameter
Max.
100
70
520
3.8
200
1.3
± 20
390
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
°C
HEXFET
Power MOSFET
S
D
G
Absolute Maximum Ratings
V
DSS
= 75V
R
DS(on)
= 0.0078
I
D
= 100A
Description
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-
profile applications.
10/05/01
www.irf.com
1
G
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
G
G
G
G
Benefits
PD -94335
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°
C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Thermal Resistance
IRF1407S
IRF1407L
TO-262
IRF1407L
D
2
Pak
IRF1407S
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
相關(guān)PDF資料
PDF描述
IRF1407S Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A)
IRF1407STRL TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB
IRF1407STRR TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB
IRF1407 Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
IRF1503 AUTOMOTIVE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1407LPBF 制造商:International Rectifier 功能描述:
IRF1407PBF 功能描述:MOSFET MOSFT 75V 130A 7.8mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1407S 功能描述:MOSFET N-CH 75V 100A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF1407SHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK
IRF1407SPBF 制造商:International Rectifier 功能描述:MOSFET, 75V, 100A, 7.8 MOHM, 160 NC QG, D2-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 100A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 75V 100A D2-PAK 制造商:International Rectifier 功能描述:MOSFET N-Channel 75V 100A D2PAK
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