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參數(shù)資料
| 型號： | IRF1407S |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 75V的，的Rds（on）\u003d0.0078з，身份證\u003d 100號A） |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 159K |
| 代理商： | IRF1407S |
IRF1407S/IRF1407L
www.irf.com
7
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25
°
C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·
f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3
·
BV
·
I
av
) =
T/ Z
thJC
I
av
=
2
T/ [1.3
·
BV
·
Z
th
]
E
AS (AR)
= P
D (ave)
·
t
av
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25
°
C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (
°
C)
0
100
200
300
400
EA
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
相關PDF資料 |
PDF描述 |
|---|---|
| IRF1407STRL | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB |
| IRF1407STRR | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB |
| IRF1407 | Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) |
| IRF1503 | AUTOMOTIVE MOSFET |
| IRF150 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1407SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK |
| IRF1407SPBF | 制造商:International Rectifier 功能描述:MOSFET, 75V, 100A, 7.8 MOHM, 160 NC QG, D2-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 100A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 75V 100A D2-PAK 制造商:International Rectifier 功能描述:MOSFET N-Channel 75V 100A D2PAK |
| IRF1407STRL | 制造商:International Rectifier 功能描述:MOSFET, 75V, 100A, 7.8 mOhm, 160 nC Qg, D2-Pak |
| IRF1407STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK T/R |
| IRF1407STRLPBF | 功能描述:MOSFET MOSFT 75V 100A 7.8mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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