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參數(shù)資料
| 型號： | IRF150 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) |
| 中文描述： | 三極管N -通道（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.055ohm，身份證\u003d 38A條） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 150K |
| 代理商： | IRF150 |
IRF150
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction to Case
RthJA
Junction to Ambient
Min Typ Max
—
—
—
— 30
Units
Test Conditions
0.83
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
38
152
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.9
500
2.9
V
nS
μc
T
j
= 25°C, IS =38A, VGS = 0V
Tj = 25°C, IF = 38A, di/dt
≤
100A/
μ
s
VDD
≤
30V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.13
Max Units
— V VGS = 0V, ID = 1.0mA
—
V/°C
Reference to 25°C, ID = 1.0mA
Test Conditions
BVDSS
—
—
2.0
9.0
—
—
— 0.055 VGS = 10V, ID =24A
— 0.065
VGS =10V, ID =38A
— 4.0 V VDS = VGS, ID =250μA
—
— S (
) VDS > 15V, IDS =24A
—
25
—
250
VGS = 0V, TJ = 125°C
—
100
—
-100
—
125 VGS =10V, ID= 38A
—
22
nC
—
65
—
35
—
190
—
170
—
130
6.1
—
nH
Measured from the center of
drain pad to center of source
pad
VDS=80V, VGS=0V
VDS =80V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
50
8.0
25
—
—
—
—
—
VGS =20V
VGS =-20V
VDS =50V
VDD =50V, ID =38A,
VGS =10V,RG =2.35
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
3700
1100
200
VGS = 0V, VDS =25V
f = 1.0MHz
—
—
pF
nA
ns
μ
A
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