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參數資料
| 型號： | IRF2907ZS-7PPBF |
| 廠商： | International Rectifier |
| 英文描述： | IRF2907ZS-7PPBF |
| 中文描述： | IRF2907ZS - 7PPBF |
| 文件頁數： | 7/10頁 |
| 文件大小： | 664K |
| 代理商： | IRF2907ZS-7PPBF |
www.irf.com
7
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 110A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF2907ZS-7PPBF_06 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF2907ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK |
| IRF2907ZSPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2907ZSTRL7PP | 功能描述:MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2907ZSTRLPBF | 功能描述:MOSFET MOSFT 75V 170A 4.5mOhm 180nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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