參數(shù)資料
型號: IRF540NS
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 100V的,的Rds(on)\u003d 44mohm,身份證\u003d 33A條)
文件頁數(shù): 1/9頁
文件大?。?/td> 86K
代理商: IRF540NS
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF540, IRF540S
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 100 V
I
D
= 23 A
R
DS(ON)
77 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’
trench
’ technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
T.V. and computer monitor power supplies
The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF540S is supplied in the SOT404 (D
2
PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
23
16
92
100
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
相關(guān)PDF資料
PDF描述
IRF540 N-Channel Power MOSFETs, 27 A, 60-100V
IRF5NJZ34 55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
IRF610A TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-220AB
IRF614A TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-220AB
IRF614S TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.7A I(D) | TO-252VAR
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