參數(shù)資料
型號: IRF5NJZ34
英文描述: 55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
中文描述: 55V的單個N -溝道高可靠性的貼片MOSFET的- 0.5軟件包
文件頁數(shù): 1/7頁
文件大?。?/td> 112K
代理商: IRF5NJZ34
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
22*
16
88
40
0.32
±20
43
22
4.0
1.8
-55 to 150
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 s)
1.0
g
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
o
C
A
02/07/03
www.irf.com
1
55V, N-CHANNEL
SMD-0.5
Product Summary
Part Number
BVDSS
R
DS(on)
I
D
IRF5NJZ34 55V 0.04
22A*
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
For footnotes refer to the last page
* Current is limited by package
HEXFET
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJZ34
PD - 94600
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