參數(shù)資料
型號(hào)： IRF5NJ5305
廠商： International Rectifier
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:37; Connector Shell Size:28; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Pin; Gender:Female
中文描述： 功率MOSFET P溝道（減振鋼板基本\u003d- 55V的，的Rds（on）\u003d 0.065ohm，身份證\u003d- 22A條*）
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 118K
代理商： IRF5NJ5305
IRF5NJ5305
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-55
—
Typ
—
-0.049
Max Units
—
—
Test Conditions
VGS = 0V, ID = -250
μ
A
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
0.065
VGS = 10V, ID = -16A
-2.0
8.0
—
—
—
—
—
—
-4.0
—
-25
-250
V
VDS = VGS, ID = -250
μ
A
VDS = -25V, IDS = -16A
VDS = -55V ,VGS=0V
VDS = -44V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -16A
VDS = -44V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
70
17
30
26
125
56
74
—
nC
VDD = -28V, ID = -16A,
RG = 6.8
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1290
495
203
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.67
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
-22*
-88
-1.3
100
250
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = -16A, VGS = 0V
Tj = 25°C, IF = -16A, di/dt
≥
100A/
μ
s
VDD
≤
-30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
相關(guān)PDF資料
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