參數(shù)資料
型號: IRF5Y31N20
廠商: International Rectifier
英文描述: Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
中文描述: 功率MOSFET N溝道(減振鋼板基本\u003d 200V的電壓,的Rds(on)\u003d 0.092ohm,身份證\u003d 18A條*)
文件頁數(shù): 1/7頁
文件大小: 99K
代理商: IRF5Y31N20
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
18*
14
72
100
0.8
±20
170
18
10
1.7
-55 to 150
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
o
C
A
01/07/02
www.irf.com
1
Product Summary
Part Number
IRF5Y31N20
BVDSS
200V
R
DS(on)
0.092
I
D
18A*
For footnotes refer to the last page
HEXFET
POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y31N20
200V, N-CHANNEL
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
TO-257AA
* Current is limited by package
PD - 94349A
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