參數(shù)資料
型號(hào): IRF6216PBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 124K
代理商: IRF6216PBF
www.irf.com
1
06/06/05
IRF6216PbF
SMPS MOSFET
HEXFET Power MOSFET
Parameter
Max.
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through are on page 8
SO-8
V
DSS
-150V
R
DS(on)
max
0.240 @V
GS
=-10V
I
D
-2.2A
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
Reset Switch for Active Clamp Reset
DC-DC converters
Lead-Free
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
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