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參數(shù)資料
| 型號(hào)： | IRF634N |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 250V，的Rds（on）\u003d 0.435ohm，身份證\u003d 8.0A） |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大小： | 301K |
| 代理商： | IRF634N |
IRF634N/S/L
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 9.5mH
R
G
= 25
, I
AS
= 4.8A,V
GS
=10V
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
This is only applied to TO-220A package
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
330.00
(14.173)
MAX.
27.40 (1.079)
60.00 (2.362)
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORM S TO EIA-418.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
9/00
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRF634N),
Industrial (IRF634NS and IRF634NL)
market.
Qualification Standards can be found on IR’s Web site.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF634NL | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| IRF634NS | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| IRF634NSTRL | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB |
| IRF634NSTRR | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB |
| IRF634PBF | HEXFET㈢ Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF634NL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRF634NLPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF634NPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF634NS | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF634NSPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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