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參數(shù)資料
| 型號： | IRF7402PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 192K |
| 代理商： | IRF7402PBF |
HEXFET
Power MOSFET
9/30/04
IRF7402PbF
Description
Parameter
Max.
50
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
f
Thermal Resistance
z
Generation V Technology
z
Ultra Low On-Resistance
z
N-Channel MOSFET
z
Very Small SOIC Package
z
Low Profile (<1.1mm)
z
Available in Tape & Reel
z
Fast Switching
z
Lead-Free
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
V
DSS
= 20V
R
DS(on)
= 0.035
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
www.irf.com
1
SO-8
Parameter
Max.
6.8
5.4
54
2.5
1.6
0.02
± 12
5.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
d
Junction and Storage Temperature Range
A
W
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
Absolute Maximum Ratings
PD - 95202
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相關代理商/技術參數(shù) |
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| IRF7402TR | 功能描述:MOSFET N-CH 20V 6.8A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7402TRPBF | 功能描述:MOSFET MOSFT 20V 6.8A 35mOhm 14nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7403 | 功能描述:MOSFET N-CH 30V 8.5A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7403_04 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF7403HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.5A 8SOIC - Rail/Tube |
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