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參數(shù)資料
| 型號： | IRF830 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Avalanche energy rated |
| 中文描述： | 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 58K |
| 代理商： | IRF830 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
High thermal cycling performance
Low thermal resistance
V
DSS
= 500 V
I
D
= 5.9 A
R
DS(ON)
≤
1.5
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
tab
drain
The IRF830 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
5.9
3.7
24
125
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 4.2 A;
t
p
= 0.21 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
287
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 5.9 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
10
mJ
I
AS
, I
AR
-
5.9
A
d
g
s
1 2 3
tab
1
pulse width and repetition rate limited by T
j
max.
March 1999
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF830 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
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| IRF830_R4943 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8301MTRPBF | 制造商:International Rectifier 功能描述:30V DIRECTFET POWER MOSFET - Tape and Reel 制造商:International Rectifier 功能描述:MOSF N CH 30V 34A DIRECTFET MT 制造商:International Rectifier 功能描述:N-Ch 30V 1.3mOhm Ultra-Low RDSon |
| IRF8302MTR1PBF | 功能描述:MOSFET 30V N-Channel HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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