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參數(shù)資料
| 型號(hào)： | IRF830 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Avalanche energy rated |
| 中文描述： | 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | IRF830 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1ms
1s
0.001
0.01
0.1
1
PHP3N60
Zth j-mb, Transient thermal impedance (K/W)
D = 0.5
1us
10us
100us
tp, pulse width (s)
10ms
100ms
D =
t
p
t
p
T
T
P
t
D
0.2
0.05
0.02
single pulse
0.1
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
5
10
15
6.5 V
10 V
PHP4N50
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5 V
5.5 V
6 V
7 V
VGS = 4.5 V
10
100
1000
10000
0.1
1
10
100
PHP4N50
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
100 us
1 ms
10 ms
RDSON =VDSID
DC
tp = 10 us
0
5
10
15
0
1
2
3
4
PHP4N50
Tj = 25 C
5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
VGS = 6 V
6.5 V
7 V
March 1999
3
Rev 1.000
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| IRF8302MTR1PBF | 功能描述:MOSFET 30V N-Channel HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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