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參數(shù)資料
| 型號(hào)： | IRFB17N20D |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.17ohm，身份證\u003d 16A條） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | IRFB17N20D |
Notes
are on page 11
www.irf.com
1
4/26/00
IRFB17N20D
IRFS17N20D
IRFSL17N20D
HEXFET
Power MOSFET
SMPS MOSFET
V
DSS
200V
R
DS(on)
max
0.17
I
D
16A
Typical SMPS Topologies
l
Telecom 48V input Forward Converter
PD- 93902A
D
2
Pak
IRFS17N20D
TO-220AB
IRFB17N20D
TO-262
IRFSL17N20D
Parameter
Max.
16
12
64
3.8
140
0.90
± 30
2.7
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFB17N20DPBF | 制造商:International Rectifier 功能描述:MOSFET N 200V 16A TO-220 |
| IRFB17N50L | 功能描述:MOSFET N-Chan 500V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB17N50LPBF | 功能描述:MOSFET N-Chan 500V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB17N60K | 功能描述:MOSFET N-Chan 600V 17 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB17N60KPBF | 功能描述:MOSFET N-Chan 600V 17 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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