參數(shù)資料
型號: IRFB17N20D
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 200V的電壓,的Rds(on)最大值\u003d 0.17ohm,身份證\u003d 16A條)
文件頁數(shù): 4/11頁
文件大?。?/td> 194K
代理商: IRFB17N20D
IRFB/IRFS/IRFSL17N20D
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.5
0.8
1.1
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 175 C
0.1
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
9.8A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
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