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參數(shù)資料
| 型號： | IRFB31N20 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.082ohm，身份證\u003d 31A條） |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 190K |
| 代理商： | IRFB31N20 |
IRFB/IRFS/IRFSL31N20D
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 3.8mH
R
G
= 25
, I
AS
= 18A.
I
SD
≤
18A, di/dt
≤
110A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
This is only applied to TO-220AB package
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
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IR ITALY:
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IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
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IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/2000
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
相關PDF資料 |
PDF描述 |
|---|---|
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| IRFB31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFS31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFSL31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFB31N20D | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N TO-220 制造商:Distributed By MCM 功能描述:200V 31A 200W Gds Ir Hexfet TO-220Ab N-Ch |
| IRFB31N20DPBF | 功能描述:MOSFET MOSFT 200V 31A 82mOhm 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3206GPBF | 功能描述:MOSFET MOSFT 60V 210A 3mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3206PBF | 功能描述:MOSFET MOSFT 60V 210A 3mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB3207 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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