
IRFE9024
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
—
—
—
— 26
"""
Soldered to a copper clad PC board
9.1
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
-5.4
-22
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-6.3
200
2.2
V
nS
μc
T
j
= 25°C, IS = -5.4A, VGS = 0V
Tj = 25°C, IF = -5.4A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-60
—
Typ
—
-0.068
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
1.3
—
—
—
— 0.29
VGS = -10V, ID = -5.4A
— - 4.0 V VDS = VGS, ID = -250μA
—
—
S (
)
VDS > -15V, IDS = -3.4A
—
-25
—
-250
VGS = 0V, TJ = 125°C
—
-100
—
100
—
19
—
5.4
nC
—
11
—
20
—
100
—
23
—
44
6.1
—
nH
Measured from the center of
drain pad to center of source
pad
0.28
VGS = -10V, ID = -3.4A
VGS(th)
gfs
IDSS
VDS= -48V, VGS= 0V
VDS =-48V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS =-20V
VGS =20V
VGS =-10V, ID= -5.4A
VDS =-30V
VDD =-30V, ID = -5.4A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
570
360
65
VGS = 0V, VDS = -25V
f = 1.0MHz
—
—
pF
nA
n s
μ
A