- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385444 > IRFIZ48N (International Rectifier) N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | IRFIZ48N |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應(yīng)管) |
| 中文描述： | N溝道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | IRFIZ48N |
IRFIZ48N
HEXFET
Power MOSFET
PRELIMINARY
PD 9.1407
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.016
I
D
= 36A
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
TO-220 FULLPAK
Parameter
Typ.
–––
–––
Max.
3.6
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Description
Parameter
Max.
36
25
210
42
0.28
± 20
270
32
4.2
5.6
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFL014N | 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N溝道 HEXFET 功率MOS場效應(yīng)管) |
| IRFL1006 | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應(yīng)管) |
| IRFN350 | POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A) |
| IRFN3710 | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A) |
| IRFN440 | POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFIZ48NPBF | 功能描述:MOSFET MOSFT 55V 36A 16mOhm 59.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIZ48NPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 36A TO-220FP |
| IRFIZ48V | 制造商:International Rectifier 功能描述:MOSFET, 60V, 39A, 12 mOhm, 73.3 nC Qg, TO-220 FULLPACK |
| IRFIZ48VPBF | 功能描述:MOSFET MOSFT 60V 39A 12mOhm 73.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFJ120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-213AA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。