參數(shù)資料
型號(hào)： IRFI3205
廠商： International Rectifier
英文描述： N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述： N溝道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 107K
代理商： IRFI3205
IRFI3205
Parameter
Min. Typ. Max. Units
55
–––
–––
0.057 –––
–––
––– 0.008
2.0
–––
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
100
–––
43
–––
70
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 34A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 59A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 59A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 59A
R
G
= 2.5
R
D
= 0.39
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
170
32
74
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
4000 –––
1300 –––
480
12
–––
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 190μH
R
G
= 25
, I
AS
= 59A. (See Figure 12)
t=60s, =60Hz
I
SD
≤
59A, di/dt
≤
290A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Uses IRF3205 data and test conditions
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse RecoveryCharge
t
on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
T
J
= 25°C, I
F
= 59A
di/dt = 100A/μs
–––
–––
–––
–––
–––
–––
–––
–––
110
450
1.3
170
680
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
64
390
S
D
G
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