參數(shù)資料
型號(hào)： IRFI540N
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.052ohm，身份證\u003d 20A條）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 131K
代理商： IRFI540N
IRFI540N
Parameter
Min. Typ. Max. Units
100
–––
–––
0.11
–––
––– 0.052
2.0
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.2
–––
39
–––
44
–––
33
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 11A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 16A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 16A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 16A
R
G
= 5.1
R
D
= 3.0
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
94
15
43
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
1400 –––
330
170
12
–––
–––
–––
nH
μA
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
–––
–––
ns
S
D
G
4.5
7.5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
–––
–––
pF
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
170
1.1
1.3
250
1.6
V
ns
μC
Source-Drain Ratings and Characteristics
A
–––
–––
110
–––
–––
20
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 2.0mH
R
G
= 25
, I
AS
= 16A. (See Figure 12)
t=60s, =60Hz
I
SD
≤
16A, di/dt
≤
210A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Uses IRF540N data and test conditions
Pulse width
≤
300μs; duty cycle
≤
2%.
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