參數(shù)資料
型號(hào): IRFIB5N65
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A)
中文描述: 功率MOSFET(減振鋼板基本\u003d?650V時(shí),RDS(on)的最大值\u003d 0.93ohm,身份證\u003d 5.1A)
文件頁數(shù): 7/8頁
文件大小: 103K
代理商: IRFIB5N65
IRFIB5N65A
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFET
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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