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參數(shù)資料
| 型號(hào)： | IRFIB7N50A |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管) |
| 中文描述： | MOSFET的開(kāi)關(guān)電源（開(kāi)關(guān)模式電源馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | IRFIB7N50A |
IRFIB7N50A
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
8
www.irf.com
Part Marking Information
TO-220 Fullpak
EXAMPLE : THIS IS AN IRFI840G
W ITH ASSEM BLY
LOT CODE E401
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SO URCE
NOTES:
1 DIMENSIONING & TO LERANCING
2 CONTROLLING DIM ENSION: INCH.
D
C
A
B
MINIMUM CREEPAG E
DISTANCE BETW EEN
A-B-C-D = 4.80 (.189)
3X
2.85 (.112)
2.65 (.104)
2.80 (.110)
2.60 (.102)
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
3.40 (.133)
3.10 (.123)
- A -
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
- B -
0.90 (.035)
0.70 (.028)
3X
0.25 (.010)
M
A M B
2.54 (.100)
2X
3X
13.70 (.540)
13.50 (.530)
16.00 (.630)
15.80 (.622)
1 2 3
10.60 (.417)
10.40 (.409)
1.40 (.055)
1.05 (.042)
0.48 (.019)
0.44 (.017)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
ASSEMBLY
LOT CODE
E401 9245
IRFI840G
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 4.5mH
R
G
= 25
, I
AS
= 11A. (See Figure 12)
I
SD
≤
11A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Uses IRFB11N50A data and test conditions
t=60s,f=60Hz
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 6/99
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFIBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) |
| IRFIBC20G | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) |
| IRFIBC40G | GT 17C 17#16 PIN RECP BOX |
| IRFIBC40 | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) |
| IRFIBC40GLC | GT 17C 17#16 PIN RECP BOX |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFIB7N50APBF | 功能描述:MOSFET N-Chan 500V 6.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIB7N50L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFIB7N50LPBF | 功能描述:MOSFET N-Chan 500V 6.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIB8N50K | 功能描述:MOSFET N-Chan 500V 6.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIB8N50KPBF | 功能描述:MOSFET N-Chan 500V 6.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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