參數(shù)資料
型號: IRFP254
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: Standard Power MOSFET - N-Channel Enhancement Mode
中文描述: 23 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 46K
代理商: IRFP254
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 14 A, pulse test
11
19
S
C
iss
C
oss
C
rss
2990
420
150
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
29
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 23 A
R
G
= 6.2
,
(External)
130
110
98
Q
g(on)
Q
gs
Q
gd
106
16
41
140
24
71
nC
nC
nC
V
GS
= 10 V, V
DS
= 200 V, I
D
= 23 A
R
thJC
R
thCK
0.65
K/W
K/W
0.24
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
23
A
I
SM
Repetitive; pulse width limited by T
JM
92
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
300
μ
s, duty cycle d
2 %
1.8
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
370
ns
IRFP 254
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRFP254BFP001 制造商:Fairchild Semiconductor Corporation 功能描述:
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