參數(shù)資料
型號(hào)： IRFP360
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： N-Channel EnhancementMode MegaMOSFET(最大漏源擊穿電壓400V,導(dǎo)通電阻0.20Ω的N溝道增強(qiáng)型MegaMOSFET)
中文描述： 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 46K
代理商： IRFP360
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1.0 M
400
400
V
V
V
GS
V
GSM
Continuous
Transient
±20
±30
V
V
I
D25
I
D100
I
DM
I
AR
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C, pulse width limited by T
JM
23
14
92
23
A
A
A
A
E
AR
T
C
= 25°C
30
mJ
dv/dt
I
S
T
J
≤
150°C, R
G
= 2
≤
I
, di/dt
5
V/ns
P
D
T
C
= 25°C
300
W
T
J
T
JM
T
stg
-55 ... +150
°C
°C
°C
150
-55 ... +150
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
6
g
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
TO-247 AD
This data reflects the objective technical specification and characterization data from engineering lots.
N-Channel Enhancement Mode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
,
I
D
= 250 μA
400
V
V
2
4
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
25
250
μA
μA
R
DS(on)
V
GS
= 10 V, I
D
= 14A
Pulse test, t
≤
300 μs, duty cycle d
≤
2
%
0.20
IRFP 360
V
DSS
I
D25
R
DS(on)
= 0.20
= 400 V
= 23 A
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Fast switching times
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
High commuting dv/dt rating
Applications
DC choppers
Motor Controls
Switch-mode and resonant-mode
Uninterruptable power supplies (UPS)
Advantages
Space savings
High power density
Easy to mount with 1 screw (isolated
mounting screw hole)
D (TAB)
Preliminary data
95509A (4/95)
MegaMOS
TM
FET
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IRFP440 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET(8.8A, 500V, 0.850 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
IRFP450 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET(14A, 500V, 0.400Ω, N溝道MOS場(chǎng)效應(yīng)管)
IRFP470 N-Channel Enhancement Mode MegaMOS FET
IRFP9140 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET
IRFP9150 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP360LC 功能描述:MOSFET N-Chan 400V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP360LCPBF 功能描述:MOSFET N-Chan 400V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP360PBF 功能描述:MOSFET N-Chan 400V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP360PBF 制造商:International Rectifier 功能描述:MOSFET
IRFP362 制造商:Rochester Electronics LLC 功能描述:- Bulk
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