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參數(shù)資料
| 型號： | IRFP9150 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET |
| 中文描述： | 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 59K |
| 代理商： | IRFP9150 |
4-63
File Number
2293.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFP9150
25A, 100V 0.150 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.
Formerly developmental type TA49230.
Features
25A, 100V
r
DS(ON)
= 0.150
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP9150
TO-247
IRFP9150
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
August 1999
相關PDF資料 |
PDF描述 |
|---|---|
| IRFR220 | 4.6A, 200V, 0.800 Ohm,N-Channel PowerMOSFET(4.6A, 200V, 0.800 Ω,nN溝道增強型功率MOS場效應管) |
| IRFU220 | 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
| IRFR420 | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs(2.5A, 500V, 3.000 Ω, N溝道功率MOS場效應管) |
| IRFU420 | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs |
| IRFU420 | Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP9150_R4941 | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP9151 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-247 |
| IRFP9230 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRFP9231 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRFP9232 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
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