參數(shù)資料
型號(hào)： IRFP450
廠商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET(14A, 500V, 0.400Ω, N溝道MOS場(chǎng)效應(yīng)管)
中文描述： 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 55K
代理商： IRFP450
4-356
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
10
10
2
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
2
10
1
0.1
I
D
,
SINGLE PULSE
T
J
= MAX RATED
DS(ON)
BY r
OPERATION IN THIS
10
μ
s
100
μ
s
1ms
10ms
DC
I
D
,
0
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
150
200
4
8
12
16
20
250
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 10V
V
GS
= 6.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 5.0V
0
4
0
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
9
15
8
12
I
D
,
16
12
20
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
2
10
1
0.1
10
-2
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
0.3
0.6
10
20
30
40
r
D
,
I
D
, DRAIN CURRENT (A)
50
0.7
0
0.4
0.5
0.8
V
GS
= 20V
V
GS
= 10V
60
70
0.9
10
PULSE DURATION = 2
μ
s
DUTY CYCLE = 0.5% MAX
r
D
,
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 7.9A
IRFP450
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP450_R4943 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450A 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450A_R4944 功能描述:MOSFET TO-3P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450APBF 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP450B 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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