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參數(shù)資料
| 型號： | IRFP450N |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）最大值\u003d 0.37ohm，身份證\u003d 14A條） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 121K |
| 代理商： | IRFP450N |
2
www.irf.com
Parameter
Min. Typ. Max. Units
7.9
–––
–––
–––
77 I
D
= 14A
–––
–––
26
–––
–––
34
–––
20
–––
–––
63
–––
–––
29
–––
–––
25
–––
–––
2260
–––
–––
210
–––
–––
14
–––
–––
2410
–––
–––
59
–––
–––
110
–––
Conditions
V
DS
= 50V, I
D
= 8.4A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 14A
R
G
= 6.2
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
170
14
20
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 14A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 14A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
430
3.7
1.4
650
5.6
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
14
56
Parameter
Typ.
–––
0.24
–––
Max.
0.64
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Static @ T
J
= 25
°
C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.59
–––
V/
°
C Reference to 25
°
C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
3.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
500
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
0.37
5.0
25
250
100
-100
V
V
GS
= 10V, I
D
= 8.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
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