參數(shù)資料
型號(hào): IRFP450N
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 500V及的Rds(on)最大值\u003d 0.37ohm,身份證\u003d 14A條)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 121K
代理商: IRFP450N
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
14A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.1
1
10
100
0.2
0.4
V ,Source-to-Drain Voltage (V)
0.6
0.8
1.0
1.2
1.4
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
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