參數(shù)資料
型號: IRFR3303TRL
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 33A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直|第33A條(丁)|對252AA
文件頁數(shù): 4/7頁
文件大?。?/td> 117K
代理商: IRFR3303TRL
2002 Fairchild Semiconductor Corporation
IRFR320, IRFU320 Rev. B
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
,
100
100
1
10
1
0.1
1000
BY r
DS(ON)
AREA IS LIMITED
10
μ
s
100
μ
s
1ms
10ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
= 25
o
C
I
D
,
0
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
80
120
160
1
2
3
4
5
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 6.0V
0
0
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
9
15
I
D
,
12
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
1
2
3
4
5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
-2
10
1
0.1
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
350V
I
D
, DRAIN CURRENT (A)
r
D
,
10
8
6
4
2
00
3
6
9
12
15
V
GS
= 20V
V
GS
= 10V
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 1.7A
IRFR320, IRFU320
相關(guān)PDF資料
PDF描述
IRFR3303TRR TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 33A I(D) | TO-252AA
IRFU320A TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA
IRFU322 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.6A I(D) | TO-251AA
IRFR421 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-252AA
IRFR422 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-252AA
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