參數(shù)資料
型號(hào)： IRFR3709ZPBF
廠商： International Rectifier
英文描述： LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 159; Grade: -3; Package: Lead-Free ftBGA; Pins: 256; Temp.: AUTO
中文描述： HEXFET功率MOSFET（減振鋼板基本\u003d 30V的，的RDS（on）最大值\u003d 650萬(wàn)ヘ，Qg和\u003d 17nC）
文件頁(yè)數(shù)： 4/12頁(yè)
文件大?。?/td> 274K
代理商： IRFR3709ZPBF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
5
10
15
20
25
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 24V
VDS= 15V
ID= 12A
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
IS
TJ = 25°C
TJ = 175°C
VGS = 0V
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
相關(guān)PDF資料
PDF描述
IRFU3709ZPBF LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 1200; Supply Voltage: 1.2V; I/Os: 73; Grade: -3; Package: Lead-Free TQFP; Pins: 100; Temp.: AUTO
IRFR3710Z Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi
IRFU3710Z Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi
IRFR3711PBF HEXFET Power MOSFET
IRFU3711PBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR3709ZPBF 制造商:International Rectifier 功能描述:MOSFET
IRFR3709ZTR 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 30V, 86A, D-PAK, Transistor Polarity:N Channel, Continuous Dra
IRFR3709ZTRLPBF 功能描述:MOSFET MOSFT 30V 86A 6.5mOhm 17nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR3709ZTRPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR3709ZTRR 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:High Frequency Synchronous Buck Converters for Computer Processor Power
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