參數資料
型號: IRFU3711PBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數: 1/11頁
文件大小: 240K
代理商: IRFU3711PBF
www.irf.com
1
IRFR3711PbF
IRFU3711PbF
SMPS MOSFET
HEXFET Power MOSFET
R
DS(on)
max
6.5m
V
DSS
20V
I
D
110A
Notes
through are on page 10
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Buck Converters for
Server Processor Power Synchronous FET
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
100% R
G
Tested
Lead-Free
Benefits
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor
T
J
, T
STG
Junction and Storage Temperature Range
Parameter
Units
V
A
Pulsed Drain Current
Maximum Power Dissipation
W
W/°C
°C
Thermal Resistance
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
–––
–––
–––
Max
1.04
50
110
Units
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
-55 to +150
Max
20
± 20
100
69
440
2.5
120
0.96
PD- 95073A
D-Pak
IRFR3711 IRFU3711
I-Pak
相關PDF資料
PDF描述
IRFR3711ZPBF Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
IRFU3711ZPBF Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.2 to 5.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
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IRFU3711ZPBF 制造商:International Rectifier 功能描述:MOSFET
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