參數(shù)資料
型號(hào): IRFR420
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs(2.5A, 500V, 3.000 Ω, N溝道功率MOS場效應(yīng)管)
中文描述: 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù): 5/7頁
文件大?。?/td> 55K
代理商: IRFR420
4-411
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
1.25
1.05
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.15
80
I
D
= 250
μ
A
160
B
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
750
600
450
300
150
01
2
5
10
2
5
10
2
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
4.0
3.2
2.4
1.6
0.8
00
0.8
1.6
2.4
3.2
4.0
I
D
, DRAIN CURRENT (A)
g
f
,
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.3
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0.6
0.9
1.2
100
10
1
0.1
I
S
,
T
J
= 150
o
C
T
J
= 25
o
C
1.5
V
GS
= 0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
4
8
12
16
20
I
D
= 2.5A
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
G
,
20
16
12
8
4
0
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
IRFR420, IRFU420
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