參數(shù)資料
型號： IRFU9120
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P溝道功率MOS場效應管)
中文描述： 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 1/7頁
文件大?。?/td> 73K
代理商： IRFU9120
4-83
File Number
3987.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFR9120, IRFU9120
5.6A, 100V 0.600 Ohm, P-Channel Power
MOSFETs
These advanced power MOSFETs are designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. They are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate-drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17501.
Features
5.6A, 100V
r
DS(ON)
= 0.600
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR9120
TO-252AA
IF9120
IRFU9120
TO-251AA
IF9120
NOTE: When ordering use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A.
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet
July 1999
相關PDF資料
PDF描述
IRFR9120 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P溝道功率MOS場效應管)
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IRL81A GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter
相關代理商/技術參數(shù)
參數(shù)描述
IRFU9120_R4941 功能描述:MOSFET TO-251 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU9120N 功能描述:MOSFET P-CH 100V 6.6A I-PAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRFU9120NHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK
IRFU9120NPBF 功能描述:MOSFET MOSFT P-Ch -100V -6.5A 480mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU9120PBF 功能描述:MOSFET P-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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