參數(shù)資料
型號(hào)： IRFR9120N
廠商： International Rectifier
英文描述： P Channel Surface Mount HEXFET Power MOSFET(P溝道表貼型HEXFET功率MOS場(chǎng)效應(yīng)管)
中文描述： P通道表面貼裝HEXFET功率MOSFET的性（P溝道表貼型的HEXFET功率馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 117K
代理商： IRFR9120N
IRFR/U9120N
HEXFET
Power MOSFET
PRELIMINARY
V
DSS
= -100V
R
DS(on)
= 0.48
I
D
= -6.6A
3/16/98
Parameter
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252AA
I-Pak
TO-251AA
l
Ultra Low On-Resistance
l
P-Channel
l
Surface Mount (IRFR9120N)
l
Straight Lead (IRFU9120N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Parameter
Max.
-6.6
-4.2
-26
40
0.32
± 20
100
-6.6
4.0
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1507A
相關(guān)PDF資料
PDF描述
IRFU9120N P Channel Straight Lead HEXFET Power MOSFET(P溝道HEXFET功率MOS場(chǎng)效應(yīng)管)
IRFR9210PBF M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PRQP0100JB-A (100P6S-A)
IRFU9210PBF M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PLQP0100KB-A (100P6Q-A)
IRFR9210 Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
IRFU9210 Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR9120NCPBF 功能描述:MOSFET P-CH 100V 6.6A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFR9120NPBF 功能描述:MOSFET 20V -100V P-CH FET 480mOhms 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9120NTR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R
IRFR9120NTRL 功能描述:MOSFET P-CH 100V 6.6A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFR9120NTRLPBF 功能描述:MOSFET MOSFT PCh -6.5A 480mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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