參數(shù)資料
型號(hào)： IRFRU024N
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.075ohm，身份證\u003d 17A條）
文件頁數(shù)： 2/10頁
文件大小： 178K
代理商： IRFRU024N
IRFR/U024N
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
56
120
1.3
83
180
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
17
68
A
V
DD
= 25V, starting T
J
= 25°C, L = 1.0mH
R
G
= 25
, I
AS
= 10A. (See Figure 12)
I
SD
≤
10A, di/dt
≤
280A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRFZ24N data and test conditions.
Notes:
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Parameter
Min. Typ. Max. Units
55
–––
–––
0.052 –––
–––
––– 0.075
2.0
–––
4.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
–––
34
–––
19
–––
27
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 10A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 10A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 10A
R
G
= 24
R
D
= 2.6
, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
20
5.3
7.6
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
370
140
65
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
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