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參數(shù)資料
| 型號(hào)： | IRFRU024N |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.075ohm，身份證\u003d 17A條） |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | IRFRU024N |
IRFR/U024N
4
www.irf.com
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
0
100
200
300
400
500
600
700
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
4
Q , Total Gate Charge (nC)
8
12
16
20
V
G
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 10A
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T = 25°C
V = 0V
V , Source-to-Drain Voltage (V)
I
S
A
T = 175°C
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR024N | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
| IRFU024N | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
| IRFRU1205 | Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) |
| IRFU1205 | Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) |
| IRFR1205 | Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFRU110A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFRU1205 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) |
| IRFRU120A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFRU130A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFRU220A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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