參數(shù)資料
型號(hào)： IRFRU9120N
廠(chǎng)商： International Rectifier
英文描述： Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)
中文描述： 功率MOSFET（減振鋼板基本\u003d- 100V的，的Rds（on）\u003d 0.48ohm，身份證\u003d- 6.6A）
文件頁(yè)數(shù)： 7/10頁(yè)
文件大?。?/td> 117K
代理商： IRFRU9120N
IRFR/U9120N
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
[ ] ***
V
DD
[ ]
I
SD
[ ]
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For P-Channel HEXFETS
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