參數(shù)資料
型號： IRFS3207ZPbF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/11頁
文件大?。?/td> 840K
代理商： IRFS3207ZPBF
2
www.irf.com
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.065mH
R
G
= 25
, I
AS
= 75A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
75A, di/dt
≤
1730A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
R
G(int)
Internal Gate Resistance
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
75
–––
–––
0.091
–––
3.3
2.0
–––
–––
0.80
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.1
4.0
–––
20
250
100
-100
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
nA
Parameter
Min. Typ. Max. Units
280
–––
–––
120
–––
27
–––
33
–––
87
–––
20
–––
68
–––
55
–––
68
–––
6920
–––
600
–––
270
–––
770
–––
960
–––
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
Min. Typ. Max. Units
–––
–––
170
A
–––
–––
670
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
36
41
50
67
2.4
1.3
54
62
75
100
–––
V
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 64V,
I
F
= 75A
di/dt = 100A/μs
Q
rr
Reverse Recovery Charge
nC
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
A
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
DS
= 38V
V
GS
= 10V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
I
D
= 75A
R
G
= 2.7
V
DD
= 49V
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相關代理商/技術參數(shù)
參數(shù)描述
IRFS3207ZPBF/010493-1/GE 制造商:International Rectifier 功能描述:MOSFET, TO GE AVIATION DWG 010493-1 - Rail/Tube
IRFS3207ZTRRPBF 功能描述:MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS3306 制造商:International Rectifier 功能描述:
IRFS3306PBF 功能描述:MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS3306TRLPBF 功能描述:MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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