參數(shù)資料
型號： IRFSL3507PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 1/12頁
文件大小： 439K
代理商： IRFSL3507PBF
01/20/06
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
www.irf.com
1
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
HEXFET Power MOSFET
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Lead-Free
S
D
G
V
DSS
R
DS(on)
typ.
max.
I
D
75V
7.0m
8.8m
97A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J
T
STG
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
mJ
A
mJ
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.77
–––
62
40
Units
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
°C/W
280
See Fig. 14, 15, 16a, 16b
190
1.3
5.0
-55 to + 175
± 20
10lb in (1.1N m)
300
Max.
97
69
390
D
2
Pak
IRFS3507PbF
TO-220AB
IRFB3507PbF
TO-262
IRFSL3507PbF
GDS
GDS
GDS
相關(guān)PDF資料
PDF描述
IRFS38N20DTRL TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB
IRFS38N20DTRR TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB
IRFB38N20D Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
IRFS38N20D RECT, 1A, 200V, ULTRAFAST, 50NS, SM
IRFSL38N20D Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFSL3607PBF 功能描述:MOSFET MOSFT 75V 80A 9.0mOhm 56nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL3806PBF 功能描述:MOSFET MOSFT 60V 43A 16.2mOhm 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL38N20D 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
IRFSL38N20DPBF 制造商:International Rectifier 功能描述:MOSFET, 200V, 44A, 54 MOHM, 60 NC QG, TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 38A 3PIN TO-262 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 200V D2-PAK
IRFSL4010PBF 功能描述:MOSFET MOSFT 100V 180A 4.7mOhm 143nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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