參數(shù)資料
型號： IRFS3306PBF
廠商： International Rectifier
英文描述： High Efficiency Synchronous Rectification in SMPS
中文描述： 高效率同步整流開關(guān)電源
文件頁數(shù)： 2/11頁
文件大小： 444K
代理商： IRFS3306PBF
2
www.irf.com
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.07mH
R
G
= 25
, I
AS
= 75A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
75A, di/dt
≤
1400A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
θ
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
60
–––
–––
0.07
–––
3.3
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.7
–––
–––
4.2
4.0
20
250
100
-100
–––
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
R
G
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
230
–––
–––
85
–––
20
–––
26
–––
59
–––
15
–––
76
–––
40
–––
77
–––
4520
–––
500
–––
250
720
–––
880
–––
120
–––
S
nC
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
pF
Diode Characteristics
Symbol
I
S
Parameter
Continuous Source Current
Min. Typ. Max. Units
–––
–––
160
A
(Body Diode)
Pulsed Source Current
I
SM
–––
–––
620
A
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
31
35
34
45
1.9
1.3
V
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 51V,
I
F
= 75A
di/dt = 100A/μs
Q
rr
Reverse Recovery Charge
nC
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
–––
A
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
DS
=30V
V
GS
= 10V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 48V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 48V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
I
D
= 75A
R
G
= 2.7
V
DD
= 30V
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IRFS3307 功能描述:MOSFET N-CH 75V 130A D2PAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件
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