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參數(shù)資料
| 型號(hào)： | IRFS4229PBF |
| 廠商： | International Rectifier |
| 英文描述： | PDP SWITCH |
| 中文描述： | 等離子開關(guān) |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 249K |
| 代理商： | IRFS4229PBF |
www.irf.com
1
04/12/06
IRFS4229PbF
Notes
through
are on page 9
Description
HEXFET
Power MOSFET
MOSFET
!
()**
)
"
MOSFET
#$%&'
MOSFET
+**
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low Q
G
for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness
and Reliability
S
D
G
G
D
S
Gate
Drain
Source
D
2
Pak
D
S
D
G
* R
θ
JC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
V
DS
min
V
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
I
RP
max @ T
C
= 100°C
T
J
max
250
300
42
91
175
V
V
m
A
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
V
A
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
I
RP
@ T
C
= 100°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.45*
62
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Max.
±30
32
180
91
330
190
2.2
45
300
-40 to + 175
10lb in (1.1N m)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IRFS4229TRLPBF | 功能描述:MOSFET MOSFT 250V 45A 48mOhm 72nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IRFS4310PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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