參數(shù)資料
型號: IRFSL4310
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 1/11頁
文件大?。?/td> 383K
代理商: IRFSL4310
11/3/04
Benefits
Worldwide Best R
DS(on)
in TO-220
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
www.irf.com
1
D
2
Pak
IRFS4310
TO-220AB
IRFB4310
TO-262
IRFSL4310
IRFB4310
IRFS4310
IRFSL4310
HEXFET Power MOSFET
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
S
D
G
S
D
G
S
D
G
S
D
G
V
DSS
R
DS(on)
typ.
max.
I
D
100V
5.6m
7.0m
140A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V
GS
dV/dt
T
J
T
STG
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
mJ
A
mJ
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
°C/W
980
See Fig. 14, 15, 22a, 22b,
330
2.2
14
-55 to + 175
± 20
10lb in (1.1N m)
300
Max.
140
97
550
相關(guān)PDF資料
PDF描述
IRFS4610 IRFB4610 IRFS4610 IRFSL4610
IRFB4610 IRFB4610 IRFS4610 IRFSL4610
IRFSL4610 IRFB4610 IRFS4610 IRFSL4610
IRFSL17N20D Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)
IRFB17N20D Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFSL4310PBF 功能描述:MOSFET MOSFT 100V 140A 7mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4310ZPBF 功能描述:MOSFET MOSFT 100V 127A 6mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4321PBF 功能描述:MOSFET MOSFT 150V 83A 15mOhm 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4410 功能描述:MOSFET N-CH 100V 96A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFSL4410PBF 功能描述:MOSFET MOSFT 100V 96A 10mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube